Flash memory is an electronic ( solid-state ) non-volatile computer storage medium that can be electrically erased and reprogrammed.
Year | Metadata | Sections | Top Words | First Paragraph |
2018 |
229949 characters 40 sections 105 paragraphs 10 images 284 internal links 170 external links |
flash 0.626 nand 0.602 erase 0.153 memory 0.143 erased 0.103 gate 0.092 cells 0.085 block 0.084 bits 0.071 cg 0.065 fg 0.065 ssd 0.065 chip 0.064 gb 0.057 blocks 0.056 |
Flash memory is an electronic ( solid-state ) non-volatile computer storage medium that can be electrically erased and reprogrammed. |
|
2017 |
216840 characters 38 sections 99 paragraphs 11 images 281 internal links 160 external links |
flash 0.633 nand 0.602 erase 0.157 memory 0.148 block 0.080 erased 0.076 bits 0.076 gate 0.071 fg 0.069 chip 0.066 cells 0.064 cg 0.061 gb 0.057 eeprom 0.056 ssds 0.055 |
Flash memory is an electronic ( solid-state ) non-volatile computer storage medium that can be electrically erased and reprogrammed. |
|
2016 |
188231 characters 38 sections 99 paragraphs 10 images 278 internal links 90 external links |
flash 0.636 nand 0.600 erase 0.158 memory 0.146 block 0.081 bits 0.073 gate 0.072 erased 0.072 fg 0.069 chip 0.066 cells 0.064 cg 0.062 eeprom 0.057 ssds 0.055 mlc 0.054 |
Flash memory is an electronic ( solid-state ) non-volatile computer storage medium that can be electrically erased and reprogrammed. |
|
2015 |
179360 characters 38 sections 96 paragraphs 10 images 268 internal links 80 external links |
flash 0.637 nand 0.597 erase 0.159 memory 0.150 block 0.082 bits 0.073 gate 0.072 erased 0.072 fg 0.070 cells 0.068 chip 0.067 cg 0.062 mlc 0.062 eeprom 0.057 gb 0.054 |
Flash memory is an electronic non-volatile computer storage medium that can be electrically erased and reprogrammed. |
|
2014 |
169454 characters 38 sections 97 paragraphs 9 images 276 internal links 74 external links |
flash 0.643 nand 0.584 erase 0.166 memory 0.152 block 0.086 fg 0.078 bits 0.074 gate 0.073 erased 0.073 chip 0.069 cells 0.068 cg 0.062 random 0.058 eeprom 0.058 chips 0.057 |
Flash memory is an electronic non-volatile computer storage medium that can be electrically erased and reprogrammed. |
|
2013 |
165652 characters 38 sections 97 paragraphs 9 images 271 internal links 71 external links |
flash 0.642 nand 0.587 erase 0.169 memory 0.157 block 0.086 bits 0.075 erased 0.074 chip 0.071 cells 0.066 gate 0.065 random 0.059 ecc 0.059 chips 0.058 bit 0.056 cg 0.056 |
Flash memory is an electronic non-volatile computer storage medium that can be electrically erased and reprogrammed. |
|
2012 |
142941 characters 33 sections 84 paragraphs 9 images 259 internal links 50 external links |
flash 0.686 nand 0.538 memory 0.164 erase 0.159 block 0.084 chip 0.067 random 0.065 cells 0.064 gate 0.062 cg 0.062 fg 0.062 bits 0.061 eeprom 0.058 gb 0.057 wear 0.057 |
Flash memory is an electronic (i.e. no moving parts) non-volatile computer storage device that can be electrically erased and reprogrammed. |
|
2011 |
131514 characters 31 sections 74 paragraphs 9 images 260 internal links 39 external links |
flash 0.658 nand 0.557 erase 0.163 memory 0.163 block 0.098 random 0.074 gate 0.070 cg 0.070 fg 0.070 bits 0.069 eeprom 0.065 blocks 0.065 cells 0.064 chip 0.063 rom 0.060 |
Flash memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. It was developed from EEPROM (electrically erasable programmable read-only memory) and must be erased in fairly large blocks before these can be rewritten with new data. The high density NAND type must also be programmed and read in (smaller) blocks, or pages, while the NOR type allows a single machine word (byte) to be written and/or read independently. |
|
2010 |
131915 characters 29 sections 77 paragraphs 10 images 261 internal links 41 external links |
flash 0.679 nand 0.514 memory 0.167 erase 0.154 ssd 0.109 gb 0.108 block 0.097 gate 0.069 chip 0.069 fg 0.069 bits 0.069 random 0.069 eeprom 0.065 erased 0.064 drives 0.060 |
Flash memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. It is primarily used in memory cards , USB flash drives , MP3 players and solid-state drives for general storage and transfer of data between computers and other digital products. It is a specific type of EEPROM (electrically erasable programmable read-only memory) that is erased and programmed in large blocks; in early flash the entire chip had to be erased at once. Flash memory costs far less than byte-programmable EEPROM and therefore has become the dominant technology wherever a significant amount of non-volatile, solid state storage is needed. Example applications include PDAs (personal digital assistants), laptop computers, digital audio players , digital cameras and mobile phones . It has also gained popularity in console video game hardware, where it is often used instead of EEPROMs or battery-powered static RAM (SRAM) for game save data. |
|
2009 |
113921 characters 29 sections 74 paragraphs 11 images 204 internal links 38 external links |
flash 0.660 nand 0.540 erase 0.188 memory 0.174 ssd 0.104 block 0.097 gate 0.073 fg 0.073 random 0.072 chip 0.069 eeprom 0.068 erased 0.067 blocks 0.063 bits 0.062 gb 0.062 |
Flash memory is a non-volatile computer storage that can be electrically erased and reprogrammed. It is a technology that is primarily used in memory cards and USB flash drives for general storage and transfer of data between computers and other digital products. It is a specific type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that is erased and programmed in large blocks; in early flash the entire chip had to be erased at once. Flash memory costs far less than byte-programmable EEPROM and therefore has become the dominant technology wherever a significant amount of non-volatile, solid state storage is needed. Example applications include PDAs (personal digital assistants), laptop computers, digital audio players , digital cameras and mobile phones . It has also gained popularity in console video game hardware, where it is often used instead of EEPROMs or battery-powered static RAM (SRAM) for game save data. |
|
2008 |
110548 characters 27 sections 69 paragraphs 10 images 233 internal links 40 external links |
flash 0.675 nand 0.527 erase 0.177 memory 0.168 ssd 0.108 gb 0.102 block 0.100 random 0.080 fg 0.075 eeprom 0.071 erased 0.069 blocks 0.065 chip 0.062 bits 0.059 cells 0.057 |
Flash memory is non-volatile computer memory that can be electrically erased and reprogrammed. It is a technology that is primarily used in memory cards and USB flash drives for general storage and transfer of data between computers and other digital products. It is a specific type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that is erased and programmed in large blocks; in early flash the entire chip had to be erased at once. Flash memory costs far less than byte-programmable EEPROM and therefore has become the dominant technology wherever a significant amount of non-volatile, solid state storage is needed. Example applications include PDAs (personal digital assistants), laptop computers, digital audio players , digital cameras and mobile phones . It has also gained popularity in the game console market, where it is often used instead of EEPROMs or battery-powered SRAM for game save data. |
|
2007 |
67666 characters 21 sections 59 paragraphs 7 images 204 internal links 29 external links |
5. Understanding the distinction between NOR and NAND flash |
flash 0.697 nand 0.511 memory 0.171 erase 0.168 block 0.109 fg 0.080 eeprom 0.075 random 0.074 chips 0.069 ssd 0.068 gb 0.068 memories 0.066 cells 0.061 blocks 0.059 chip 0.058 |
Flash memory is non-volatile computer memory that can be electrically erased and reprogrammed. It is a technology that is primarily used in memory cards , and USB flash drives (thumb drives, handy drive, memory stick, flash stick, jump drive) for general storage and transfer of data between computers and other digital products. It is a specific type of EEPROM that is erased and programmed in large blocks; in early flash the entire chip had to be erased at once. Flash memory costs far less than byte-programmable EEPROM and therefore has become the dominant technology wherever a significant amount of non-volatile, solid-state storage is needed. Examples of applications include PDAs and laptop computers, digital audio players , digital cameras and mobile phones . It has also gained some popularity in the game console market, where it is often used instead of EEPROMs or battery-powered SRAM ("Save RAM", which was not necessarily static RAM ) for game save data. |
2006 |
45832 characters 16 sections 46 paragraphs 2 images 156 internal links 16 external links |
9. Data corruption and recovery 10. Flash memory as a replacement for hard drives |
flash 0.688 nand 0.423 memory 0.219 memories 0.185 erase 0.167 block 0.122 fg 0.118 cg 0.102 ssd 0.102 removable 0.087 erased 0.085 cards 0.082 write 0.076 electrons 0.076 mapped 0.073 |
Flash memory is a form of non-volatile computer memory that can be electrically erased and reprogrammed. It is a technology that is primarily used in memory cards . Unlike EEPROM , it is erased and programmed in blocks consisting of multiple locations (in early flash the entire chip had to be erased at once). Flash memory costs far less than EEPROM and therefore has become the dominant technology wherever a significant amount of non-volatile, solid-state storage is needed. Examples of applications include digital audio players , digital cameras and mobile phones . Flash memory is also used in USB flash drives (thumb drives, handy drive), which are used for general storage and transfer of data between computers. It has also gained some popularity in the game console market, where it is often used instead of EEPROMs or battery-powered SRAM for game save data. |
2005 |
27266 characters 10 sections 32 paragraphs 2 images 81 internal links 15 external links |
flash 0.660 nand 0.408 memory 0.257 erase 0.247 memories 0.179 fg 0.150 cg 0.129 gate 0.100 electrons 0.097 erased 0.092 write 0.090 mapped 0.077 toshiba 0.077 cell 0.072 masuoka 0.064 |
Flash memory is a form of EEPROM (Electrically-Erasable Programmable Read-Only Memory) that allows multiple memory locations to be erased or written in one programming operation. In layman's terms, it is a form of rewritable memory chip that, unlike a Random Access Memory chip, holds its content without the need of a power supply. It is also an example of a Non-Volatile Read Write Memory (NVRWM). The memory is commonly used in memory cards , USB flash drives , MP3 players , digital cameras and mobile phones . |
|
2004 |
14382 characters 5 sections 15 paragraphs 0 images 43 internal links 6 external links |
flash 0.639 nand 0.317 fg 0.282 erase 0.260 cg 0.211 electrons 0.158 erased 0.151 memory 0.147 dram 0.144 gate 0.123 filesystem 0.106 cell 0.101 eeprom 0.087 oxide 0.082 tunnel 0.070 |
Flash memory is a form of EEPROM that allows multiple memory locations to be erased or written in one programming operation. Normal EEPROM only allows one location at a time to be erased or written, meaning that flash can operate at higher effective speeds when the systems using it read and write to different locations at the same time. All types of flash memory and EEPROM wear out after a certain number of erase operations, due to wear on the insulating oxide layer around the charge storage mechanism used to store data. |
|
2003 |
3489 characters 0 sections 5 paragraphs 0 images 20 internal links 0 external links |
flash 0.656 erase 0.356 nand 0.325 eeprom 0.267 removable 0.209 memory 0.185 endurance 0.178 erased 0.155 mmc 0.108 smartmedia 0.108 write 0.098 cards 0.088 wear 0.078 storage 0.078 toshiba 0.078 |
|
|
2002 |
922 characters 0 sections 1 paragraphs 0 images 1 internal links 0 external links |
eeprom 0.692 erased 0.604 written 0.191 flash 0.182 memory 0.160 locations 0.134 programming 0.113 normal 0.107 location 0.101 operation 0.076 allows 0.028 multiple 0.025 allow 0.023 form 0.015 time 0.002 |
Flash Memory is a form of EEPROM that allow multiple memory locations to be erased or written in one programming operation. Normal EEPROM only allows one location at a time to be erased or written. |